![]() Review and comparison of layer transfer methods for two-dimensional materials for emerging applications. Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe 2 films grown at 400 ☌. Scalable BEOL compatible 2D tungsten diselenide. Scalable low-temperature synthesis of two-dimensional materials beyond graphene. 2018 International Conference on IC Design & Technology ( ICICDT) 141–144 (IEEE, 2018). A review on opportunities brought by 3D-monolithic integration for CMOS device and digital circuit. 2D Crystal Consortium (2021).ĭumcenco, D. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. Promises and prospects of two-dimensional transistors. Quantum engineering of transistors based on 2D materials heterostructures. Iannaccone, G., Bonaccorso, F., Colombo, L. Two-dimensional materials and their prospects in transistor electronics. Two-dimensional semiconductors for transistors. Graphene and two-dimensional materials for silicon technology. Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. In International Electron Devices Meeting Technical Digest 47–50 (IEEE, 2002). Experimental study on carrier transport mechanism in ultrathin-body SOI n and p-MOSFETs with SOI thickness less than 5 nm. Scaling challenges for advanced CMOS devices. We also highlight potential applications of 2D transistors in conventional micro/nanoelectronics, neuromorphic computing, advanced sensing, data storage and future interconnect technologies. We consider the key performance indicators for aggressively scaled 2D transistors and discuss how these should be extracted and reported. ![]() Here we review the development of 2D field-effect transistors for use in future VLSI technologies. ![]() The large-area growth of uniform 2D layers is also required to ensure low defect density, low device-to-device variation and clean interfaces. To achieve this, multiple challenges must be overcome, including reducing the contact resistance, developing stable and controllable doping schemes, advancing mobility engineering and improving high- κ dielectric integration. Nature Electronics volume 4, pages 786–799 ( 2021) Cite this articleįield-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or heterogeneous integration remains to be determined. Transistors based on two-dimensional materials for future integrated circuits ![]()
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